Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

RS Stock No.:: 787-8995P
Mfr. Part No.:: SI9945BDY-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

5100 In stock - FREE next working day delivery available

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

£0.522

(exc. VAT)

£0.626

(inc. VAT)

Units	Per unit
100 - 240	£0.522
250 - 490	£0.473
500 - 990	£0.445
1000 +	£0.418

RS Stock No.:: 787-8995P
Mfr. Part No.:: SI9945BDY-T1-GE3
Brand:: Vishay

Si9945BDY, Dual N-Channel 60V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	13 nC @ 10 V
Width	4mm
Number of Elements per Chip	2
Transistor Material	Si
Length	5mm
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor