Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
240 A, 295 A
Maximum Drain Source Voltage
40 V
Package Type
TO-262WL
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
150 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Number of Elements per Chip
1
Width
4.83mm
Height
9.65mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
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