N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220AB Infineon IRF8010PBF

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
784-0290
Mfr. Part No.:
IRF8010PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

260 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.69mm

Maximum Operating Temperature

+175 °C

Length

10.54mm

Transistor Material

Si

Typical Gate Charge @ Vgs

81 nC @ 10 V

Number of Elements per Chip

1

Series

HEXFET

Height

15.24mm

Minimum Operating Temperature

-55 °C

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.