Infineon HEXFET N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB IRF2805PBF
- RS Stock No.:
- 784-0274P
- Mfr. Part No.:
- IRF2805PBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 10 - 24 | £1.20 |
| 25 - 49 | £1.14 |
| 50 - 99 | £1.07 |
| 100 + | £1.01 |
*price indicative
- RS Stock No.:
- 784-0274P
- Mfr. Part No.:
- IRF2805PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 330 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Height | 16.51mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Length 10.67mm | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 16.51mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 75A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF2805PBF
This power MOSFET delivers excellent performance for various electronic applications. Its robust specifications are designed for industrial environments, ensuring both reliability and efficiency. With low on-resistance, this component supports high current capability, making it suitable for advanced circuits.
Features & Benefits
• Supports a maximum continuous drain current of 75A
• Enhances efficiency with a low RDS(on) of 4.7mΩ
• Compatible with +20 V/-20 V gate-source voltage for improved flexibility
• Capable of fast switching speeds to meet dynamic performance needs
• Supports repetitive avalanche handling for operational resilience
• Enhances efficiency with a low RDS(on) of 4.7mΩ
• Compatible with +20 V/-20 V gate-source voltage for improved flexibility
• Capable of fast switching speeds to meet dynamic performance needs
• Supports repetitive avalanche handling for operational resilience
Applications
• Used in industrial motor drives for effective power control
• Suitable for power management in automation systems
• Employed in renewable energy systems for efficient switching
• Utilised in high-performance and durable power tools
• Applicable in battery management systems for electric vehicles
• Suitable for power management in automation systems
• Employed in renewable energy systems for efficient switching
• Utilised in high-performance and durable power tools
• Applicable in battery management systems for electric vehicles
What is the maximum temperature this component can withstand?
It can operate within a temperature range of -55°C to +175°C for performance in extreme conditions.
How does this MOSFET handle high current applications?
It is designed to manage a continuous drain current of 75A, making it suitable for high current demands.
Can it be used in applications with fast switching requirements?
Yes, this MOSFET supports fast switching speeds, ideal for applications requiring dynamic performance.
Is this device suitable for use in power inverters?
Yes, its thermal stability and capacity for high current handling make it appropriate for power inverter applications in renewable energy systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
