onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 NTZS3151PT1G
- RS Stock No.:
- 780-4806P
- Mfr. Part No.:
- NTZS3151PT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£19.40
(exc. VAT)
£23.30
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 17 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 225 | £0.194 |
| 250 - 475 | £0.168 |
| 500 - 975 | £0.148 |
| 1000 + | £0.135 |
*price indicative
- RS Stock No.:
- 780-4806P
- Mfr. Part No.:
- NTZS3151PT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 950 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-563 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 240 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 210 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 1.3mm | |
| Typical Gate Charge @ Vgs | 5.6 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Length | 1.7mm | |
| Height | 0.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 950 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-563 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 240 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 210 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 1.3mm | ||
Typical Gate Charge @ Vgs 5.6 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Length 1.7mm | ||
Height 0.6mm | ||
Minimum Operating Temperature -55 °C | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor