onsemi P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-323 NTS4173PT1G
- RS Stock No.:
- 780-4761P
- Mfr. Part No.:
- NTS4173PT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£20.30
(exc. VAT)
£24.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 225 | £0.203 |
| 250 - 475 | £0.176 |
| 500 - 975 | £0.155 |
| 1000 + | £0.141 |
*price indicative
- RS Stock No.:
- 780-4761P
- Mfr. Part No.:
- NTS4173PT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.3 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-323 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 280 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 350 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Transistor Material | Si | |
| Width | 1.35mm | |
| Typical Gate Charge @ Vgs | 10.1 nC @ 10 V, 4.8 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2.2mm | |
| Number of Elements per Chip | 1 | |
| Height | 0.9mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.3 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 350 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Transistor Material Si | ||
Width 1.35mm | ||
Typical Gate Charge @ Vgs 10.1 nC @ 10 V, 4.8 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Length 2.2mm | ||
Number of Elements per Chip 1 | ||
Height 0.9mm | ||
Minimum Operating Temperature -55 °C | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor