onsemi Dual N/P-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN NTLJD3119CTBG
- RS Stock No.:
- 780-0655P
- Mfr. Part No.:
- NTLJD3119CTBG
- Brand:
- onsemi
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Subtotal 100 units (supplied on a continuous strip)*
£52.40
(exc. VAT)
£62.90
(inc. VAT)
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- Shipping from 06 February 2026
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Units | Per unit |
|---|---|
| 100 - 240 | £0.524 |
| 250 - 490 | £0.454 |
| 500 - 990 | £0.399 |
| 1000 + | £0.363 |
*price indicative
- RS Stock No.:
- 780-0655P
- Mfr. Part No.:
- NTLJD3119CTBG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 4.1 A, 4.6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | WDFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 120 mΩ, 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.3 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Transistor Material | Si | |
| Width | 2mm | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V | |
| Length | 2mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 4.1 A, 4.6 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type WDFN | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 120 mΩ, 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.3 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Transistor Material Si | ||
Width 2mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V | ||
Length 2mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor