Dual P-Channel MOSFET, 4.1 A, 20 V, 6-Pin WDFN onsemi NTLJD3115PG
- RS Stock No.:
- 780-0646
- Mfr. Part No.:
- NTLJD3115PT1G
- Brand:
- ON Semiconductor
Discontinued
- RS Stock No.:
- 780-0646
- Mfr. Part No.:
- NTLJD3115PT1G
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 4.1 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | WDFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.3 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Length | 2mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 5.5 nC @ 4.5 V | |
| Transistor Material | Si | |
| Width | 2mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type P | ||
Maximum Continuous Drain Current 4.1 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type WDFN | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.3 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Length 2mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 5.5 nC @ 4.5 V | ||
Transistor Material Si | ||
Width 2mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor