Infineon StrongIRFET N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-220AB IRFB7430PBF
- RS Stock No.:
- 776-9172P
- Mfr. Part No.:
- IRFB7430PBF
- Brand:
- Infineon
Subtotal 1 unit (supplied in a tube)*
£1.90
(exc. VAT)
£2.28
(inc. VAT)
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- Plus 1,995 unit(s) shipping from 06 October 2025
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Units | Per unit |
|---|---|
| 1 + | £1.90 |
*price indicative
- RS Stock No.:
- 776-9172P
- Mfr. Part No.:
- IRFB7430PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 195 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | StrongIRFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 375 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.83mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 460 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.51mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 195 A | ||
Maximum Drain Source Voltage 40 V | ||
Series StrongIRFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.83mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 460 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 16.51mm | ||
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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