onsemi Dual N/P-Channel-Channel MOSFET, 340 mA, 510 mA, 60 V, 6-Pin SOT-23 NDC7001C
- RS Stock No.:
- 761-4574P
- Mfr. Part No.:
- NDC7001C
- Brand:
- onsemi
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Subtotal 100 units (supplied on a continuous strip)*
£26.70
(exc. VAT)
£32.00
(inc. VAT)
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In Stock
- 1,430 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 100 - 240 | £0.267 |
| 250 - 490 | £0.232 |
| 500 - 990 | £0.204 |
| 1000 + | £0.185 |
*price indicative
- RS Stock No.:
- 761-4574P
- Mfr. Part No.:
- NDC7001C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 340 mA, 510 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 4 Ω, 10 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 960 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 1.1 nC @ 10 V, 1.6 nC @ 10 V | |
| Number of Elements per Chip | 2 | |
| Width | 1.7mm | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 340 mA, 510 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 4 Ω, 10 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 960 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 1.1 nC @ 10 V, 1.6 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Width 1.7mm | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
The NDC7001C is a dual N & P-Channel MOSFET that feature ON Semi’s DMOS technology. DMOS ensures fast switching, reliability and on-state resistance. These MOSFETs are a SOT-23 package type featuring 6 pins.
Features and benefits:
• DMOS Technology
• High saturation current
• High density cell design
• Copper lead frame for superior thermal and electrical capabilities
• High saturation current
• High density cell design
• Copper lead frame for superior thermal and electrical capabilities
NDC7001C MOSFETs are ideal for;
• Low voltage
• Low current
• Switching
• Power supplies
• Low current
• Switching
• Power supplies
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.