onsemi PowerTrench Dual N/P-Channel MOSFET, 1.9 A, 2.7 A, 20 V, 6-Pin SOT-23 FDC6327C
- RS Stock No.:
- 761-3956P
- Mfr. Part No.:
- FDC6327C
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£51.30
(exc. VAT)
£61.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,280 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £0.513 |
| 250 - 490 | £0.445 |
| 500 - 990 | £0.391 |
| 1000 + | £0.356 |
*price indicative
- RS Stock No.:
- 761-3956P
- Mfr. Part No.:
- FDC6327C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 1.9 A, 2.7 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 130 mΩ, 270 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 960 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 2.85 nC @ 4.5 V, 3.25 nC @ 4.5 V | |
| Width | 1.7mm | |
| Transistor Material | Si | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 1.9 A, 2.7 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 130 mΩ, 270 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 960 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 2.85 nC @ 4.5 V, 3.25 nC @ 4.5 V | ||
Width 1.7mm | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.