N-Channel MOSFET, 4.4 A, 520 V, 3-Pin TO-220 STMicroelectronics STP5NK52ZD
- RS Stock No.:
- 760-9711
- Mfr. Part No.:
- STP5NK52ZD
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
£8.03
(exc. VAT)
£9.635
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.606 | £8.03 |
| 25 - 45 | £1.51 | £7.55 |
| 50 - 120 | £1.432 | £7.16 |
| 125 - 245 | £1.35 | £6.75 |
| 250 + | £1.286 | £6.43 |
*price indicative
- RS Stock No.:
- 760-9711
- Mfr. Part No.:
- STP5NK52ZD
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.4 A | |
| Maximum Drain Source Voltage | 520 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 70 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 16.9 nC @ 10 V | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.6mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Series | MDmesh, SuperMESH | |
| Height | 15.75mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.4 A | ||
Maximum Drain Source Voltage 520 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 70 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 16.9 nC @ 10 V | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Width 4.6mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Series MDmesh, SuperMESH | ||
Height 15.75mm | ||
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