N-Channel MOSFET, 17 A, 650 V, 3-Pin D2PAK STMicroelectronics STB24NM60N
- RS Stock No.:
- 760-9499P
- Mfr. Part No.:
- STB24NM60N
- Brand:
- STMicroelectronics
Subtotal (10 reels of 1 unit)**. Quantities below 150 on continuous strip
£29.50
(exc. VAT)
£35.40
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit |
|---|---|
| 10 - 99 | £2.80 |
| 100 - 499 | £2.51 |
| 500 - 999 | £2.21 |
| 1000 + | £1.92 |
**price indicative
- RS Stock No.:
- 760-9499P
- Mfr. Part No.:
- STB24NM60N
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | MDmesh | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 10.4mm | |
| Length | 10.75mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 4.6mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 650 V | ||
Series MDmesh | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 10.4mm | ||
Length 10.75mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 46 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 4.6mm | ||
Minimum Operating Temperature -55 °C | ||