onsemi PowerTrench N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN8 FDMS8622
- RS Stock No.:
- 760-5918P
- Mfr. Part No.:
- FDMS8622
- Brand:
- onsemi
Subtotal 50 units (supplied on a continuous strip)*
£51.00
(exc. VAT)
£61.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 29 December 2025
Units | Per unit |
---|---|
50 - 95 | £1.02 |
100 - 495 | £0.884 |
500 - 995 | £0.778 |
1000 + | £0.708 |
*price indicative
- RS Stock No.:
- 760-5918P
- Mfr. Part No.:
- FDMS8622
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 17 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | PQFN8 | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 97 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 31 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 6mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 5 nC @ 10 V | |
Length | 5mm | |
Minimum Operating Temperature | -55 °C | |
Height | 1.05mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PQFN8 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 97 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 31 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 5 nC @ 10 V | ||
Length 5mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.