Infineon HEXFET P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 IRLML2244TRPBF

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Packaging Options:
RS Stock No.:
760-4438P
Mfr. Part No.:
IRLML2244TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

6.9 nC @ 4.5 V

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.02mm

Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 20V Maximum Drain Source Voltage - IRLML2244TRPBF


This MOSFET is designed for robust performance in a compact SOT-23 package. With a maximum continuous drain current of 4.3A and a drain-source voltage of 20V, it is suitable for various applications in the automation, electronics, and electrical industries. The device features enhancement mode operation and offers reliable performance in high-temperature environments, maintaining functionality in temperatures up to +150°C.

Features & Benefits


• Low RDS(on) of 54mΩ minimises switching losses
• Compatible with industry-standard pinout for easy integration
• High reliability with a maximum power dissipation of 1.3W
• Narrow temperature range for optimal operational efficiency
• Reduced gate charge enhances overall efficiency

Applications


• Ideal for low-voltage switching in electronics
• Suitable for power management in DC-DC converters
• Utilised in motor control systems for automation equipment
• Used in power supply circuits for enhanced energy management

What is the significance of the low RDS(on) in this component?


The low RDS(on) significantly reduces the power losses during operation, leading to improved efficiency and performance, especially in switching applications.

How does the operating temperature range benefit circuit design?


An operating temperature range of -55°C to +150°C allows for versatility in applications, enabling the MOSFET to function reliably in various operating environments, from extreme cold to high heat.

What makes this device suitable for surface mount technology?


The compact SOT-23 package design and compatible pinout facilitate easy integration into PCB layouts, enhancing manufacturing efficiency and allowing for mass production.

Can this MOSFET be used in automotive applications?


Yes, due to its high thermal resistance and reliability at elevated temperatures, it is suitable for automotive applications where heat dissipation is critical.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.