onsemi PowerTrench N-Channel MOSFET, 11.2 A, 100 V, 8-Pin SOIC FDS86140
- RS Stock No.:
- 759-9689P
- Mfr. Part No.:
- FDS86140
- Brand:
- onsemi
Subtotal 20 units (supplied on a continuous strip)*
£26.50
(exc. VAT)
£31.80
(inc. VAT)
FREE delivery for orders over £50.00
- 304 unit(s) ready to ship
Units | Per unit |
---|---|
20 - 198 | £1.325 |
200 - 998 | £1.145 |
1000 + | £1.01 |
*price indicative
- RS Stock No.:
- 759-9689P
- Mfr. Part No.:
- FDS86140
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 11.2 A | |
Maximum Drain Source Voltage | 100 V | |
Series | PowerTrench | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 17 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 5mm | |
Number of Elements per Chip | 1 | |
Length | 4mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 29 nC @ 10 V | |
Transistor Material | Si | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.2 A | ||
Maximum Drain Source Voltage 100 V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 17 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5mm | ||
Number of Elements per Chip 1 | ||
Length 4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 29 nC @ 10 V | ||
Transistor Material Si | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.