onsemi PowerTrench N-Channel MOSFET, 265 A, 60 V, 3-Pin TO-220 FDP025N06
- RS Stock No.:
- 759-9664P
- Mfr. Part No.:
- FDP025N06
- Brand:
- onsemi
Subtotal 10 units (supplied in a tube)*
£32.30
(exc. VAT)
£38.80
(inc. VAT)
FREE delivery for orders over £50.00
- Final 112 unit(s), ready to ship
Units | Per unit |
---|---|
10 + | £3.23 |
*price indicative
- RS Stock No.:
- 759-9664P
- Mfr. Part No.:
- FDP025N06
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 265 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-220 | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2.5 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 395 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 4.5mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 174 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Length | 9.9mm | |
Height | 15.7mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 265 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 395 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.5mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 174 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 9.9mm | ||
Height 15.7mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.