onsemi PowerTrench Dual N-Channel MOSFET, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1024NZT
- RS Stock No.:
- 759-9576
- Mfr. Part No.:
- FDME1024NZT
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£2.98
(exc. VAT)
£3.575
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 25 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £0.596 | £2.98 |
| 10 - 95 | £0.486 | £2.43 |
| 100 - 495 | £0.342 | £1.71 |
| 500 - 995 | £0.298 | £1.49 |
| 1000 + | £0.252 | £1.26 |
*price indicative
- RS Stock No.:
- 759-9576
- Mfr. Part No.:
- FDME1024NZT
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.8 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | PowerTrench | |
| Package Type | MicroFET Thin | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.4 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
| Length | 1.6mm | |
| Typical Gate Charge @ Vgs | 3 nC @ 4.5 V | |
| Width | 1.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.5mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.8 A | ||
Maximum Drain Source Voltage 20 V | ||
Series PowerTrench | ||
Package Type MicroFET Thin | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.4 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Length 1.6mm | ||
Typical Gate Charge @ Vgs 3 nC @ 4.5 V | ||
Width 1.6mm | ||
Maximum Operating Temperature +150 °C | ||
Height 0.5mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.