onsemi PowerTrench N-Channel MOSFET, 145 A, 40 V, 3-Pin DPAK FDD8444
- RS Stock No.:
- 759-9100P
- Mfr. Part No.:
- FDD8444
- Brand:
- onsemi
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£23.80
(exc. VAT)
£28.60
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 13 January 2026
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Units | Per unit |
|---|---|
| 20 - 198 | £1.19 |
| 200 - 998 | £1.03 |
| 1000 + | £0.905 |
*price indicative
- RS Stock No.:
- 759-9100P
- Mfr. Part No.:
- FDD8444
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 145 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DPAK (TO-252) | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9.4 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 153 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 89 nC @ 10 V | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 145 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9.4 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 153 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 89 nC @ 10 V | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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