onsemi PowerTrench P-Channel MOSFET, 55 A, 35 V, 3-Pin DPAK FDD6637
- RS Stock No.:
- 759-9093
- Mfr. Part No.:
- FDD6637
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£5.16
(exc. VAT)
£6.19
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 3,165 left, ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.032 | £5.16 |
| 50 - 95 | £0.89 | £4.45 |
| 100 - 495 | £0.772 | £3.86 |
| 500 - 995 | £0.678 | £3.39 |
| 1000 + | £0.616 | £3.08 |
*price indicative
- RS Stock No.:
- 759-9093
- Mfr. Part No.:
- FDD6637
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 55 A | |
| Maximum Drain Source Voltage | 35 V | |
| Package Type | DPAK (TO-252) | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 19 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 57 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Typical Gate Charge @ Vgs | 45 nC @ 10 V | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 55 A | ||
Maximum Drain Source Voltage 35 V | ||
Package Type DPAK (TO-252) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 19 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 57 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 45 nC @ 10 V | ||
Width 6.22mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
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