onsemi PowerTrench P-Channel MOSFET, 6.7 A, 12 V, 3-Pin DPAK FDD306P
- RS Stock No.:
- 759-9065P
- Mfr. Part No.:
- FDD306P
- Brand:
- onsemi
Subtotal 10 units (supplied on a continuous strip)*
£2.34
(exc. VAT)
£2.81
(inc. VAT)
FREE delivery for orders over £50.00
- Final 4,960 unit(s), ready to ship
Units | Per unit |
---|---|
10 + | £0.234 |
*price indicative
- RS Stock No.:
- 759-9065P
- Mfr. Part No.:
- FDD306P
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 6.7 A | |
Maximum Drain Source Voltage | 12 V | |
Series | PowerTrench | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 90 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 52 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 15 nC @ 4.5 V | |
Width | 6.22mm | |
Length | 6.73mm | |
Number of Elements per Chip | 1 | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.7 A | ||
Maximum Drain Source Voltage 12 V | ||
Series PowerTrench | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 52 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 15 nC @ 4.5 V | ||
Width 6.22mm | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.