onsemi PowerTrench N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 FDC3512
- RS Stock No.:
- 759-9011P
- Mfr. Part No.:
- FDC3512
- Brand:
- onsemi
Subtotal 50 units (supplied on a continuous strip)*
£39.20
(exc. VAT)
£47.05
(inc. VAT)
FREE delivery for orders over £50.00
- 2,675 unit(s) ready to ship
Units | Per unit |
---|---|
50 - 95 | £0.784 |
100 - 495 | £0.68 |
500 - 995 | £0.598 |
1000 + | £0.544 |
*price indicative
- RS Stock No.:
- 759-9011P
- Mfr. Part No.:
- FDC3512
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 3 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | SOT-23 | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 141 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 1.6 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 13 nC @ 10 V | |
Width | 1.7mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Length | 3mm | |
Number of Elements per Chip | 1 | |
Height | 1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 141 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 13 nC @ 10 V | ||
Width 1.7mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.