onsemi UniFET Type N-Channel MOSFET, 44 A, 250 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 759-8989P
- Mfr. Part No.:
- FDB44N25TM
- Brand:
- onsemi
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Subtotal 20 units (supplied on a continuous strip)*
£35.80
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£43.00
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In Stock
- 4,616 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 20 - 198 | £1.79 |
| 200 + | £1.55 |
*price indicative
- RS Stock No.:
- 759-8989P
- Mfr. Part No.:
- FDB44N25TM
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | UniFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 69mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 307W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Width | 11.33 mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series UniFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 69mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 307W | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Width 11.33 mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.