Infineon OptiMOS™ 3 N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON BSZ520N15NS3GATMA1

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Subtotal 20 units (supplied on a continuous strip)*

£23.10

(exc. VAT)

£27.72

(inc. VAT)

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20 - 48£1.155
50 - 98£1.075
100 - 198£0.995
200 +£0.91

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Packaging Options:
RS Stock No.:
754-5389P
Mfr. Part No.:
BSZ520N15NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

150 V

Package Type

TSDSON

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

8.7 nC @ 10 V

Width

3.4mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.4mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.