N-Channel MOSFET, 48 A, 30 V, 8-Pin TDSON Infineon BSC090N03LSGATMA1

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RS will no longer stock this product.
Packaging Options:
RS Stock No.:
754-5282
Mfr. Part No.:
BSC090N03LSGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

30 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

32 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.35mm

Minimum Operating Temperature

-55 °C

Series

OptiMOS 3

Height

1.1mm

The Infineon BSC090N03LS G is the ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. The package type of the MOSFET is the PG-TDSON-8.

Ultra low gate and output charge
Lowest on state resistance in small footprint packages
Easy to design in