N-Channel MOSFET, 4.4 A, 650 V, 3-Pin DPAK Infineon IPD60R950C6ATMA1
- RS Stock No.:
- 753-3015P
- Mfr. Part No.:
- IPD60R950C6ATMA1
- Brand:
- Infineon
Subtotal 5 units (supplied on a continuous strip)*
£1.55
(exc. VAT)
£1.85
(inc. VAT)
Units | Per unit |
---|---|
5 + | £0.31 |
*price indicative
- RS Stock No.:
- 753-3015P
- Mfr. Part No.:
- IPD60R950C6ATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 4.4 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 950 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 37 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 6.22mm | |
Length | 6.73mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 13 nC @ 10 V | |
Transistor Material | Si | |
Height | 2.41mm | |
Minimum Operating Temperature | -55 °C | |
Series | CoolMOS C6 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.4 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 950 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 37 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 13 nC @ 10 V | ||
Transistor Material Si | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
Series CoolMOS C6 | ||