N-Channel MOSFET, 4.4 A, 650 V, 3-Pin DPAK Infineon IPD60R950C6ATMA1

Subtotal 5 units (supplied on a continuous strip)*

£1.55

(exc. VAT)

£1.85

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per unit
5 +£0.31

*price indicative

Packaging Options:
RS Stock No.:
753-3015P
Mfr. Part No.:
IPD60R950C6ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.4 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Length

6.73mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

13 nC @ 10 V

Transistor Material

Si

Height

2.41mm

Minimum Operating Temperature

-55 °C

Series

CoolMOS C6

Infineon CoolMOS™C6/C7 Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.