Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2

Subtotal 25 units (supplied on a continuous strip)*

£6.975

(exc. VAT)

£8.375

(inc. VAT)

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Units
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25 +£0.279

*price indicative

Packaging Options:
RS Stock No.:
753-2838P
Mfr. Part No.:
BSS126H6327XTSA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

21 mA

Maximum Drain Source Voltage

600 V

Series

SIPMOS®

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.4 nC @ 5 V

Length

2.9mm

Number of Elements per Chip

1

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.