Infineon SIPMOS® N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6327XTSA1
- RS Stock No.:
- 753-2800
- Mfr. Part No.:
- BSP129H6327XTSA1
- Brand:
- Infineon
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Subtotal (1 pack of 5 units)*
£2.02
(exc. VAT)
£2.425
(inc. VAT)
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In Stock
- 60 unit(s) ready to ship
- Plus 255 unit(s) shipping from 21 October 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.404 | £2.02 |
| 50 - 120 | £0.362 | £1.81 |
| 125 - 245 | £0.334 | £1.67 |
| 250 - 495 | £0.31 | £1.55 |
| 500 + | £0.292 | £1.46 |
*price indicative
- RS Stock No.:
- 753-2800
- Mfr. Part No.:
- BSP129H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 350 mA | |
| Maximum Drain Source Voltage | 240 V | |
| Series | SIPMOS® | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.5mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 3.8 nC @ 5 V | |
| Width | 3.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.6mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 350 mA | ||
Maximum Drain Source Voltage 240 V | ||
Series SIPMOS® | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.5mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 3.8 nC @ 5 V | ||
Width 3.5mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.6mm | ||
Infineon SIPMOS® N-Channel MOSFETs
Infineon SIPMOS® Series MOSFET, 280 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP129H6906XTSA1
This small-signal transistor is an effective solution for devices that require high voltage and surface mount capability. As a depletion mode N-channel MOSFET, it enables efficient operation in various electronic applications. With a maximum drain-source voltage of 240V and a continuous drain current capacity of 280mA, this product is well-suited for automation and automotive applications, making it a dependable choice for managing power in different electronic circuits.
Features & Benefits
• N-channel configuration supports efficient switching operations
• Depletion mode functionality ensures constant current performance
• High voltage ratings provide versatility in applications
• Low gate threshold voltage enhances system compatibility
• Surface mount design allows for space-efficient installations
• AEC-Q101 qualified, suitable for automotive usage
• Depletion mode functionality ensures constant current performance
• High voltage ratings provide versatility in applications
• Low gate threshold voltage enhances system compatibility
• Surface mount design allows for space-efficient installations
• AEC-Q101 qualified, suitable for automotive usage
Applications
• Suitable for automotive control systems
• Can be used in power management circuits
• Consumer electronics for enhanced efficiency
• Can be used in power management circuits
• Consumer electronics for enhanced efficiency
How can proper installation be ensured for optimal performance?
Install the MOSFET on the PCB following specified mounting guidelines, ensuring correct thermal management for effective heat dissipation.
What should be considered for thermal management during operation?
Thermal resistance must be monitored, as the operational temperature ranges from -55°C to +150°C, requiring adequate PCB design to facilitate efficient heat conduction.
What type of gate drive is recommended for this product?
A gate voltage within the specified range of ±20V is essential for optimal switching characteristics, ensuring dependable operation across applications.
Can this MOSFET be utilised in high-speed switching applications?
Yes, it is designed to function effectively in high-speed switching scenarios, thanks to specified turn-on and turn-off delay times.
What should be noted regarding gate charge characteristics?
The total gate charge at 5V is approximately 3.8nC, optimising power efficiency during switching without placing excessive load on the driving circuits.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
