N-Channel MOSFET, 2 A, 800 V, 3-Pin DPAK Infineon SPD02N80C3BTMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Number of Elements per Chip

1

Width

6.22mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

12 nC @ 10 V

Transistor Material

Si

Height

2.41mm

Minimum Operating Temperature

-55 °C

Series

CoolMOS C3