N-Channel MOSFET, 4.5 A, 650 V, 3-Pin D2PAK Infineon SPB04N60C3ATMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

10.31mm

Width

9.45mm

Transistor Material

Si

Number of Elements per Chip

1

Height

4.57mm

Minimum Operating Temperature

-55 °C

Series

CoolMOS C3