N-Channel MOSFET, 190 mA, 800 V, 3 + Tab-Pin SOT-223 Infineon BSP300H6327XUSA1
- RS Stock No.:
- 752-8211
- Mfr. Part No.:
- BSP300H6327XUSA1
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 752-8211
- Mfr. Part No.:
- BSP300H6327XUSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 190 mA | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 + Tab | |
| Maximum Drain Source Resistance | 20 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 3.5mm | |
| Length | 6.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Series | SIPMOS | |
| Height | 1.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 190 mA | ||
Maximum Drain Source Voltage 800 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 + Tab | ||
Maximum Drain Source Resistance 20 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 3.5mm | ||
Length 6.5mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Series SIPMOS | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||