N-Channel MOSFET, 190 mA, 800 V, 3 + Tab-Pin SOT-223 Infineon BSP300H6327XUSA1

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
752-8211
Mfr. Part No.:
BSP300H6327XUSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

800 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.5mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.5mm

Transistor Material

Si

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Height

1.6mm

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.