Diodes Inc Quad N/P-Channel MOSFET, 1 A, 850 mA, 100 V, 8-Pin SOIC ZXMHC10A07N8TC
- RS Stock No.:
- 751-5332P
- Mfr. Part No.:
- ZXMHC10A07N8TC
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£42.60
(exc. VAT)
£51.10
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 24 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 + | £0.852 |
*price indicative
- RS Stock No.:
- 751-5332P
- Mfr. Part No.:
- ZXMHC10A07N8TC
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 1 A, 850 mA | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.45 Ω, 900 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 1.36 W | |
| Transistor Configuration | Full Bridge | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 4 | |
| Typical Gate Charge @ Vgs | 2.9 nC @ 10 V, 3.5 nC @ 50 V | |
| Transistor Material | Si | |
| Width | 4mm | |
| Length | 5mm | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 1 A, 850 mA | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.45 Ω, 900 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 1.36 W | ||
Transistor Configuration Full Bridge | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 4 | ||
Typical Gate Charge @ Vgs 2.9 nC @ 10 V, 3.5 nC @ 50 V | ||
Transistor Material Si | ||
Width 4mm | ||
Length 5mm | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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