Diodes Inc Dual N/P-Channel-Channel MOSFET, 1 A, 840 mA, 20 V, 6-Pin SOT-363 DMG1016UDW-7
- RS Stock No.:
- 751-4089P
- Mfr. Part No.:
- DMG1016UDW-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 600 units (supplied on a reel)*
£23.40
(exc. VAT)
£28.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 103,750 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 600 - 1450 | £0.039 |
| 1500 + | £0.038 |
*price indicative
- RS Stock No.:
- 751-4089P
- Mfr. Part No.:
- DMG1016UDW-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 1 A, 840 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 1.5 Ω, 750 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 330 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -6 V, +6 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V | |
| Number of Elements per Chip | 2 | |
| Length | 2.2mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.35mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 1 A, 840 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 1.5 Ω, 750 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 330 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -6 V, +6 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V | ||
Number of Elements per Chip 2 | ||
Length 2.2mm | ||
Maximum Operating Temperature +150 °C | ||
Width 1.35mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.