Diodes Inc Dual N/P-Channel-Channel MOSFET, 7 A, 8.5 A, 30 V, 8-Pin SOIC DMC3021LSD-13
- RS Stock No.:
- 751-4067P
- Mfr. Part No.:
- DMC3021LSD-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 125 units (supplied on a continuous strip)*
£37.00
(exc. VAT)
£44.375
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 18 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 125 - 600 | £0.296 |
| 625 - 1225 | £0.247 |
| 1250 + | £0.199 |
*price indicative
- RS Stock No.:
- 751-4067P
- Mfr. Part No.:
- DMC3021LSD-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 7 A, 8.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 32 mΩ, 53 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 16.1 nC @ 10 V, 21.1 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.95mm | |
| Transistor Material | Si | |
| Length | 4.95mm | |
| Number of Elements per Chip | 2 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 7 A, 8.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 32 mΩ, 53 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 16.1 nC @ 10 V, 21.1 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.95mm | ||
Transistor Material Si | ||
Length 4.95mm | ||
Number of Elements per Chip 2 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.