N-Channel MOSFET Transistor, 40 A, 500 V, 3-Pin TO-264 Fairchild FQL40N50
- RS Stock No.:
- 739-0230
- Mfr. Part No.:
- FQL40N50
- Brand:
- Fairchild Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 739-0230
- Mfr. Part No.:
- FQL40N50
- Brand:
- Fairchild Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Fairchild Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-264 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 460 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5mm | |
| Typical Gate Charge @ Vgs | 155 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 20mm | |
| Number of Elements per Chip | 1 | |
| Height | 26mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Fairchild Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-264 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 460 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5mm | ||
Typical Gate Charge @ Vgs 155 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 20mm | ||
Number of Elements per Chip 1 | ||
Height 26mm | ||
Minimum Operating Temperature -55 °C | ||
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.