onsemi Dual N-Channel MOSFET, 510 mA, 50 V, 6-Pin SOT-23 NDC7002N
- RS Stock No.:
- 739-0161P
- Mfr. Part No.:
- NDC7002N
- Brand:
- onsemi
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Subtotal 50 units (supplied on a continuous strip)*
£18.00
(exc. VAT)
£21.50
(inc. VAT)
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In Stock
- 7,645 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 50 - 95 | £0.36 |
| 100 - 495 | £0.312 |
| 500 - 995 | £0.274 |
| 1000 + | £0.25 |
*price indicative
- RS Stock No.:
- 739-0161P
- Mfr. Part No.:
- NDC7002N
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 510 mA | |
| Maximum Drain Source Voltage | 50 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 4 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 960 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Width | 1.7mm | |
| Typical Gate Charge @ Vgs | 1 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 510 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 4 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 960 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Width 1.7mm | ||
Typical Gate Charge @ Vgs 1 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.