N-Channel MOSFET, 10 A, 20 V, 7-Pin DFN2020 Infineon IRLHS6242TRPBF

RS Stock No.:: 737-7256P
Mfr. Part No.:: IRLHS6242TRPBF
Brand:: Infineon

N-Channel MOSFET, 10 A, 20 V, 7-Pin DFN2020 Infineon IRLHS6242TRPBF

Subtotal 10 units (supplied on a continuous strip)*

£4.49

(exc. VAT)

£5.39

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit
10 +	£0.449

*price indicative

RS Stock No.:: 737-7256P
Mfr. Part No.:: IRLHS6242TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	10 A
	Maximum Drain Source Voltage	20 V
	Package Type	DFN2020
	Mounting Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance	15.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.1V
	Minimum Gate Threshold Voltage	0.5V
	Maximum Power Dissipation	1.98 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Typical Gate Charge @ Vgs	14 nC @ 4.5 V
	Width	2.1mm
	Number of Elements per Chip	1
	Length	2.1mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Series	HEXFET
	Minimum Operating Temperature	-55 °C
	Height	0.95mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 10 A
	Maximum Drain Source Voltage 20 V
	Package Type DFN2020
	Mounting Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance 15.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.1V
	Minimum Gate Threshold Voltage 0.5V
	Maximum Power Dissipation 1.98 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Typical Gate Charge @ Vgs 14 nC @ 4.5 V
	Width 2.1mm
	Number of Elements per Chip 1
	Length 2.1mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Series HEXFET
	Minimum Operating Temperature -55 °C
	Height 0.95mm

N-Channel Power MOSFET 12V to 25V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.