Infineon HEXFET N-Channel MOSFET, 280 A, 40 V, 3-Pin TO-220 IRF2804PBF
- RS Stock No.:
- 716-5558P
- Mfr. Part No.:
- IRF2804PBF
- Brand:
- Infineon
Subtotal 2 units (supplied in a tube)*
£4.64
(exc. VAT)
£5.56
(inc. VAT)
Units | Per unit |
---|---|
2 + | £2.32 |
*price indicative
- RS Stock No.:
- 716-5558P
- Mfr. Part No.:
- IRF2804PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 280 A | |
Maximum Drain Source Voltage | 40 V | |
Series | HEXFET | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 330 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 160 nC @ 10 V | |
Width | 4.83mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 10.67mm | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 9.02mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 280 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 160 nC @ 10 V | ||
Width 4.83mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 9.02mm | ||