Infineon HEXFET N-Channel MOSFET, 320 A, 40 V, 7-Pin D2PAK AUIRF2804S-7P
- RS Stock No.:
- 715-7746
- Mfr. Part No.:
- AUIRF2804S-7P
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 715-7746
- Mfr. Part No.:
- AUIRF2804S-7P
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 320 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 1.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 330 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 170 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 11.33mm | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 320 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 1.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 170 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 11.33mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
