STMicroelectronics STripFET N-Channel MOSFET, 23 A, 100 V, 3-Pin DPAK STD15NF10T4
- RS Stock No.:
- 714-1060P
- Mfr. Part No.:
- STD15NF10T4
- Brand:
- STMicroelectronics
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Subtotal 10 units (supplied on a continuous strip)*
£1.96
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£2.35
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In Stock
- 1,555 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 - 20 | £0.196 |
| 25 - 95 | £0.192 |
| 100 - 495 | £0.146 |
| 500 + | £0.136 |
*price indicative
- RS Stock No.:
- 714-1060P
- Mfr. Part No.:
- STD15NF10T4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 23 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK (TO-252) | |
| Series | STripFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 80 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 70 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Width | 6.2mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Height | 2.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 23 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series STripFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 80 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 70 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Width 6.2mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Height 2.4mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel STripFET™, STMicroelectronics
The STMicroelectronics Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
100% avalanche tested
Low gate charge
MOSFET Transistors, STMicroelectronics