Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3
- RS Stock No.:
- 710-4764P
- Mfr. Part No.:
- SI7850DP-T1-E3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£69.00
(exc. VAT)
£83.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,595 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 120 | £1.38 |
| 125 - 245 | £1.202 |
| 250 - 495 | £0.99 |
| 500 + | £0.782 |
*price indicative
- RS Stock No.:
- 710-4764P
- Mfr. Part No.:
- SI7850DP-T1-E3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.2 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerPAK SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 22 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.89mm | |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
| Length | 4.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 1.04mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.2 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerPAK SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 22 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.89mm | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Length 4.9mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 1.04mm | ||
Minimum Operating Temperature -55 °C | ||
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