N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 Vishay SI7850DP-T1-E3

RS Stock No.:: 710-4764P
Mfr. Part No.:: SI7850DP-T1-E3
Brand:: Vishay

N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 Vishay SI7850DP-T1-E3

2670 In stock - FREE next working day delivery available

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

£0.434

(exc. VAT)

£0.521

(inc. VAT)

Units	Per unit
5 +	£0.434

RS Stock No.:: 710-4764P
Mfr. Part No.:: SI7850DP-T1-E3
Brand:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6.2 A
Maximum Drain Source Voltage	60 V
Package Type	PowerPAK SO-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	22 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	5.89mm
Length	4.9mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	18 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.04mm

N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 Vishay SI7850DP-T1-E3

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor