Vishay Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC SI4559ADY-T1-GE3
- RS Stock No.:
- 710-3345P
- Mfr. Part No.:
- SI4559ADY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£73.90
(exc. VAT)
£88.70
(inc. VAT)
FREE delivery for orders over £50.00
Being discontinued
- Final 3,890 unit(s), ready to ship
Units | Per unit |
|---|---|
| 50 - 120 | £1.478 |
| 125 - 245 | £1.394 |
| 250 - 495 | £1.306 |
| 500 + | £1.216 |
*price indicative
- RS Stock No.:
- 710-3345P
- Mfr. Part No.:
- SI4559ADY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 3.9 A, 5.3 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 72 mΩ, 150 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3.1 W, 3.4 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 13 nC @ 30 V, 14.5 nC @ 30 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 3.9 A, 5.3 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 72 mΩ, 150 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.1 W, 3.4 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 13 nC @ 30 V, 14.5 nC @ 30 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Vishay Semiconductor
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