Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3

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Subtotal 100 units (supplied on a continuous strip)*

£54.80

(exc. VAT)

£65.80

(inc. VAT)

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100 - 240£0.548
250 - 490£0.496
500 - 990£0.468
1000 +£0.437

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Packaging Options:
RS Stock No.:
710-3320P
Mfr. Part No.:
Si4134DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Number of Elements per Chip

1

Transistor Material

Si

Width

4mm

Typical Gate Charge @ Vgs

15.4 nC @ 10 V, 7.3 nC @ 4.5 V

Height

1.5mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

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