Vishay N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC SI4116DY-T1-GE3
- RS Stock No.:
- 710-3317P
- Mfr. Part No.:
- SI4116DY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£36.50
(exc. VAT)
£44.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 2,410 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 245 | £0.73 |
| 250 - 495 | £0.66 |
| 500 - 1245 | £0.622 |
| 1250 + | £0.584 |
*price indicative
- RS Stock No.:
- 710-3317P
- Mfr. Part No.:
- SI4116DY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12.7 A | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 9 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 17.5 nC @ 4.5 V, 37 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.55mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 12.7 A | ||
Maximum Drain Source Voltage 25 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 9 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 17.5 nC @ 4.5 V, 37 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Height 1.55mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor