Vishay P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 SI2301CDS-T1-GE3
- RS Stock No.:
- 710-3238
- Mfr. Part No.:
- SI2301CDS-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)*
£5.14
(exc. VAT)
£6.16
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- 360 left, ready to ship
- Plus 360 left, ready to ship from another location
- Final 2,680 unit(s) shipping from 21 October 2025
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £0.257 | £5.14 |
| 200 - 480 | £0.206 | £4.12 |
| 500 - 980 | £0.154 | £3.08 |
| 1000 - 1980 | £0.128 | £2.56 |
| 2000 + | £0.116 | £2.32 |
*price indicative
- RS Stock No.:
- 710-3238
- Mfr. Part No.:
- SI2301CDS-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.3 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 112 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 860 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Width | 1.4mm | |
| Length | 3.04mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.3 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 112 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 860 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 1.4mm | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor