Vishay N-Channel MOSFET, 8 A, 500 V, 3-Pin D2PAK IRF840SPBF
- RS Stock No.:
- 708-4752P
- Mfr. Part No.:
- IRF840SPBF
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied in a tube)*
£72.60
(exc. VAT)
£87.10
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 95 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 120 | £1.452 |
| 125 - 245 | £1.39 |
| 250 - 495 | £1.236 |
| 500 + | £1.16 |
*price indicative
- RS Stock No.:
- 708-4752P
- Mfr. Part No.:
- IRF840SPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 850 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 3.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Length | 10.41mm | |
| Width | 9.65mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 850 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Length 10.41mm | ||
Width 9.65mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 500V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
Dynamic dV/dt rating
Repetitive avalanche rated
Simple drive requirement
Repetitive avalanche rated
Simple drive requirement
MOSFET Transistors, Vishay Semiconductor