Dual N/P-Channel MOSFET, 180 mA, 20 V, 6-Pin US Toshiba SSM6L35FU(TE85L,F)
- RS Stock No.:
- 695-4837
- Mfr. Part No.:
- SSM6L35FU(TE85L,F)
- Brand:
- Toshiba
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 695-4837
- Mfr. Part No.:
- SSM6L35FU(TE85L,F)
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 180 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | US | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 20 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 200 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Number of Elements per Chip | 2 | |
| Length | 1.25mm | |
| Width | 1.25mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 0.9mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 180 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type US | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 20 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 200 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Number of Elements per Chip 2 | ||
Length 1.25mm | ||
Width 1.25mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 0.9mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- JP