onsemi N-Channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 NTR4501NT1G
- RS Stock No.:
- 688-9146P
- Mfr. Part No.:
- NTR4501NT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 60 units (supplied on a continuous strip)*
£12.60
(exc. VAT)
£15.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 5,274 unit(s) shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 60 - 118 | £0.21 |
| 120 - 198 | £0.18 |
| 200 - 498 | £0.17 |
| 500 + | £0.165 |
*price indicative
- RS Stock No.:
- 688-9146P
- Mfr. Part No.:
- NTR4501NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 80 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 2.4 nC @ 4.5 V | |
| Width | 1.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.94mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 80 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 2.4 nC @ 4.5 V | ||
Width 1.3mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.94mm | ||
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