Infineon HEXFET Type N-Channel MOSFET, 130 A, 200 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 688-7027P
- Mfr. Part No.:
- IRFP4668PBF
- Brand:
- Infineon
Subtotal 1 unit (supplied in a tube)*
£5.22
(exc. VAT)
£6.26
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,578 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £5.22 |
*price indicative
- RS Stock No.:
- 688-7027P
- Mfr. Part No.:
- IRFP4668PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 130A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 520W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 161nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.7mm | |
| Width | 5.31 mm | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 130A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 520W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 161nC | ||
Maximum Operating Temperature 175°C | ||
Height 20.7mm | ||
Width 5.31 mm | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 200V Maximum Drain Source Voltage - IRFP4668PBF
This MOSFET is a high-performance N-channel device designed for efficient power management in various applications. Its dimensions are 15.87mm in length, 5.31mm in width, and 20.7mm in height, housed in a TO-247AC package. With robust specifications including a maximum continuous drain current of 130A and a maximum drain-source voltage of 200V, it is Ideal for demanding electrical applications.
Features & Benefits
• Enhanced body diode for improved switching performance
• Low Rds(on) of 10mΩ minimises power loss
• High efficiency in synchronous rectification circuits
• Increased ruggedness under dynamic dV/dt conditions
• Fully characterised avalanche and thermal performance for reliability
Applications
• Used in high-speed power switching
• Suitable for uninterruptible power supply systems
• Ideal for hard-switched and high-frequency circuits
• Applicable in various automation and industrial power systems
What are the thermal ratings for safe operation?
The maximum power dissipation is rated at 520W at 25°C, and the junction temperature should not exceed 175°C to ensure safe operation.
How does the gate threshold voltage impact functionality?
The gate threshold voltage ranges from 3V to 5V, facilitating efficient control during switching operations, which is Crucial for reliable performance in power applications.
Can this MOSFET handle high pulsed current loads?
Yes, it is rated for a pulsed drain current of up to 520A, making it suitable for heavy-duty applications requiring high current handling capabilities.
