Infineon HEXFET N-Channel MOSFET, 171 A, 150 V, 3-Pin TO-247AC IRFP4568PBF
- RS Stock No.:
- 688-7018P
- Mfr. Part No.:
- IRFP4568PBF
- Brand:
- Infineon
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Subtotal 10 units (supplied in a tube)*
£54.50
(exc. VAT)
£65.40
(inc. VAT)
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Last RS stock
- Final 1 unit(s), ready to ship
Units | Per unit |
|---|---|
| 10 - 24 | £5.45 |
| 25 - 49 | £5.14 |
| 50 - 99 | £4.78 |
| 100 + | £4.42 |
*price indicative
- RS Stock No.:
- 688-7018P
- Mfr. Part No.:
- IRFP4568PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 171 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | HEXFET | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 517 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Width | 5.31mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 151 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 171 A | ||
Maximum Drain Source Voltage 150 V | ||
Series HEXFET | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 517 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Width 5.31mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 151 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 15.87mm | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
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Infineon HEXFET Series MOSFET, 171A Maximum Continuous Drain Current, 517W Maximum Power Dissipation - IRFP4568PBF
This N-channel MOSFET is designed for high efficiency and consistent performance across various electronic circuits. Its robust features cater to power management and switching applications. The TO-247AC package facilitates effective thermal management and simplifies installation in through-hole configurations.
Features & Benefits
• Enhanced body diode recovery characteristics improve reliability
• Low on-resistance minimises power losses during operation
• Maximum power dissipation capability of 517 W accommodates high-demand application.
• Wide operating temperature range of -55°C to +175°C ensures functionality in diverse environment.
• Excellent gate threshold voltages optimise performance during switching actions.
• Single transistor configuration streamlines circuit designs for ease of use
• Low on-resistance minimises power losses during operation
• Maximum power dissipation capability of 517 W accommodates high-demand application.
• Wide operating temperature range of -55°C to +175°C ensures functionality in diverse environment.
• Excellent gate threshold voltages optimise performance during switching actions.
• Single transistor configuration streamlines circuit designs for ease of use
Applications
• High-efficiency synchronous rectification
• Uninterruptible power supplies for dependable backup
• High-speed power switching circuits
• Suitable for hard-switched and high-frequency
• Uninterruptible power supplies for dependable backup
• High-speed power switching circuits
• Suitable for hard-switched and high-frequency
What is the maximum continuous drain current this device can support?
The device supports a maximum continuous drain current of 171 A under optimal conditions.
How does the device manage heat during operation?
With a maximum power dissipation of 517W, the device effectively handles heat generated during operation.
What are the typical gate charge requirements?
The typical gate charge is approximately 151 nC at a gate-to-source voltage of 10 V, ensuring efficient switching performance.
Can it withstand extreme temperature variations?
Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for various environmental conditions.
Is it suitable for synchronous rectification applications?
Yes, its design promotes high efficiency, making it ideal for synchronous rectification within power supply designs.
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